Simulation Study of Low Dimensional Effects in Pitch-Scaled (90 nm Technology Node) High Electron Mobility Transistors for Very Large Scale Integration Applications
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Published:2013-02-01
Issue:2
Volume:8
Page:170-176
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Gomes Umesh P.,Takhar Kuldeep,Yadav Yogendra K.,Ranjan Kumud,Rathi Servin,Biswas Dhrubes
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials