Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Gallium antimonide device related properties
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4. An InAs channel heterojunction field-effect transistor with high transconductance
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