Band‐edge alignment in heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102158
Reference12 articles.
1. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
2. Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs
3. Self-aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxy
4. Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces
5. Electronic structure of (001) and (111) growth axis InAs–Ga1−xInxSb strained-layer superlattices
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