Discrete monolayer light emission from GaSb wetting layer in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748087
Reference13 articles.
1. Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter
2. GaInAs∕AlAsSb quantum-cascade lasers operating up to 400K
3. Radiative states in type-II GaSb/GaAs quantum wells
4. Radiative recombination in type‐II GaSb/GaAs quantum dots
5. Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots
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1. Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material;Scientific Reports;2020-03-16
2. Room-temperature photoluminescence of AP-MOVPE grown single GaSb/GaAs quantum dot layer;Journal of Crystal Growth;2019-12
3. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity;Applied Physics Letters;2015-08-31
4. Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells;Applied Physics Letters;2013-08-05
5. Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells;Journal of Applied Physics;2013-04-07
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