Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1995948
Reference12 articles.
1. High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3
2. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition
3. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
4. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
5. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
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1. Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs;Journal of Crystal Growth;2014-06
2. Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy;Applied Physics Letters;2013-07-15
3. Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters;IEEE Electron Device Letters;2013-05
4. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors;Applied Physics Letters;2012-08-13
5. Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors;physica status solidi (a);2012-05-03
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