Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors
Author:
Publisher
Wiley
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127699/fullpdf
Reference17 articles.
1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
2. Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz
3. Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter
4. Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors
5. Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
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