Effects of carrier injection profile on low noise thin Al085Ga015As056Sb044 avalanche photodiodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference15 articles.
1. Avalanche Noise Characteristics in Submicron InP Diodes
2. Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$
3. Excess Noise Characteristics of Thin AlAsSb APDs
4. Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise
5. Characteristics of Al$_{x}$In 1−$_{x}$As $_{y}$Sb1− $_{y}$ (x:0.3−0.7) Avalanche Photodiodes
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