Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells-Reference-Cited by-同舟云学术

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Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Published:2012-07-15 Issue:2 Volume:112 Page:023108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mikhailova M. P.,Ivanov E. V.,Danilov L. V.,Kalinina K. V.,Stoyanov N. D.,Zegrya G. G.,Yakovlev Yu. P.,Hulicius E.,Hospodková A.,Pangrác J.,Zíkova M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4739279

Reference23 articles.

1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

2. Short wavelength intersubband emission from InAs∕AlSb quantum cascade structures

3. Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination;Semiconductors;2020-12

2. Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review);Semiconductors;2020-12

3. Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well;Journal of Applied Physics;2019-12-21

4. Discovery of III–V Semiconductors: Physical Properties and Application;Semiconductors;2019-03

5. Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field;Semiconductors;2017-10

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