Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range-Reference-Cited by-同舟云学术

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Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

Published:2008-11-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Mikhailova M. P.,Andreev I. A.,Moiseev K. D.,Ivanov E. V.,Stoyanov N. D.,Yakovlev Yu. P.,Hulicius E.,Hospodková A.,Pangrác J.,Melichar K.,Simecek T.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well;Photonics, Devices, and Systems VI;2015-01-06

2. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well;Journal of Applied Physics;2014-06-14

3. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy;Semiconductors;2013-08

4. Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells;Integrated Optics: Physics and Simulations;2013-05-07

5. Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells;Journal of Applied Physics;2012-07-15

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