Thermal characteristics of GaN-on-diamond HEMTs: Impact of anisotropic and inhomogeneous thermal conductivity of polycrystalline diamond-Reference-Cited by-同舟云学术

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Thermal characteristics of GaN-on-diamond HEMTs: Impact of anisotropic and inhomogeneous thermal conductivity of polycrystalline diamond

Published:2019-05 Issue: Volume:95 Page:28-35
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Zou Bo,Sun Huarui,Guo Huaixin,Dai Bing,Zhu Jiaqi

Funder

National Natural Science Foundation of China

Shenzhen Municipal Science and Technology Research Project

HIT

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Comparison of GaN HEMTs on diamond and SiC substrates;Felbinger;IEEE Electron Device Lett.,2007

2. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs;Zhou;Appl. Phys. Lett.,2017

3. Barrier-layer optimization for enhanced GaN-on-diamond device cooling;Zhou;ACS Appl. Mater. Interfaces,2017

4. Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping;Pomeroy;Appl. Phys. Lett.,2014

5. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films;Tadjer;IEEE Electron Device Lett.,2012

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3. Characteristics of β-Ga2O3 MOSFETs on polycrystalline diamond via electrothermal modeling;Diamond and Related Materials;2024-02

4. Densification and Surface Carbon Transformation of Diamond Powders under High Pressure and High Temperature;Materials;2024-01-26

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