Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling-Reference-Cited by-同舟云学术

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Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Published:2017-09-21 Issue:39 Volume:9 Page:34416-34422
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Yan¹^ORCID,Anaya Julian¹,Pomeroy James¹,Sun Huarui¹^ORCID,Gu Xing²,Xie Andy²,Beam Edward²,Becker Michael³,Grotjohn Timothy A.³⁴,Lee Cathy²,Kuball Martin¹

Affiliation:

1. Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.

2. Qorvo Inc., 500 W. Renner Road, Richardson, Texas 75080, United States

3. Fraunhofer, USA Center for Coatings and Diamond Technologies, East Lansing, Michigan 48824, United States

4. Michigan State University, East Lansing, Michigan 48824, United States

Funder

Engineering and Physical Sciences Research Council

Defense Advanced Research Projects Agency

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b08961

Reference50 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. AlGaN/GaN HFET reliability

3. Optical, thermal and mechanical properties of CVD diamond

4. Yates, L.; Sood, A.; Cheng, Z.; Bougher, T.; Malcolm, K.; Cho, J.; Asheghi, M.; Goodson, K.; Goorsky, M.; Faili, F.InCharacterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS);IEEE, 2016; pp1–4.

5. AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

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