AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz
Author:
Affiliation:
1. Infrastructure and Defense ProductsTriQuint Semiconductor500 W. Renner RoadRichardsonTX75080USA
2. Element Six Technologies3901 BurtonSanta ClaraCA95054USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.1973
Reference4 articles.
1. Thermal conductivity measurements on CVD diamond
2. Development of high quality, tailored CVD diamond using hot filaments;Engdahl C.;Finer Points Super‐Abrasive Ind. Rev.,2012
3. GaN on Si HEMT with 65% power added efficiency at 10 GHz;Dumka D.C.;IEE Electron. Lett.,2010
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