GaN on Si HEMT with 65% power added efficiency at 10 GHz
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2010.1284?crawler=true&mimetype=application/pdf
Reference5 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz
3. Progress in GaN Performances and Reliability
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