Characteristics of β-Ga2O3 MOSFETs on polycrystalline diamond via electrothermal modeling-Reference-Cited by-同舟云学术

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Characteristics of β-Ga2O3 MOSFETs on polycrystalline diamond via electrothermal modeling

Published:2024-02 Issue: Volume:142 Page:110847
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Xie Yinfei,He Yang,Zou Bo,Guo Huaixin,Sun Huarui

Funder

Science and Technology Planning Project of Shenzhen Municipality

Guangdong Provincial Department of Science and Technology

Publisher

Elsevier BV

Reference51 articles.

1. Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers;Shoemaker;IEEE Trans. Compon. Pack. Manuf. Technol.,2021

2. Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach;El-Helou;Semicond. Sci. Technol.,2020

3. Electrothermal characteristics of delta-doped β-Ga2O3 metal–semiconductor field-effect transistors;Kumar;IEEE Trans. Electron Devices,2019

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

5. A 800V β-Ga2O3 metal–oxide–semiconductor field-effect transistor with high-power figure of merit of over 86.3MWcm−2;Feng;Phys. Status Solidi A-Appl. Mat.,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on synthesis and applications of gallium oxide materials;Advances in Colloid and Interface Science;2024-06

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