A 800 V β‐Ga 2 O 3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm −2-Reference-Cited by-同舟云学术

A 800 V β‐Ga 2 O 3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm −2

Published:2019-08-22 Issue:20 Volume:216 Page:1900421
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Feng Zhaoqing¹²^ORCID,Cai Yuncong¹²,Yan Guangshuo¹²,Hu Zhuangzhuang¹²,Dang Kui¹²,Zhang Yanni¹²,Lu Zhijun¹,Cheng Hongjuan³,Lian Xiaozheng³,Xu Yongkuan³,Zhang Chunfu¹²,Feng Qian¹²,Zhou Hong¹²,Zhang Jincheng¹²,Hao Yue¹²

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China

2. Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University Xi'an 710071 China

3. Laboratory of Novel Semiconductor Crystal Materials Technology China Electronics Technology Group Corporation No. 46 Research Institute Tianjin 300220 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900421

Reference33 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

4. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

5. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

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