Junctionless SOI FinFET with advanced spacer techniques for sub-3 nm technology nodes

Author:

Sreenivasulu V. Bharath,Narendar Vadthiya

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference31 articles.

1. Junctionless field-effect transistors: design, modeling, and simulation;Sahay,2019

2. Improved digital performance of charge plasma based junctionless C-FinFETs at 10 nm technology node and beyond;Banerjee;AEU - Int J Electron Commun,2020

3. Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design;Kumar;AEU - Int J Electron Commun,2020

4. Analog and RF performance evaluation of negative capacitance SOI junctionless transistor;Moparthi;AEU – Int J Electron Commun,2020

5. Tamersit K. Sub-10nm junctionless carbon nanotube field-effect transistors with improved performance. AEU - Int J Electron Commun. 124:153354. http://doi.org/10.1016/j.aeue.2020.153354.

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