Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance

Author:

Tamersit Khalil

Funder

Scientific Research and Technological Development (DGRSDT—MESRS), Algeria

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference63 articles.

1. A.D. Franklin, Nanomaterials in transistors: From high-performance to thin-film applications, Science 349(6249), p. aab2750, Aug. 2015.

2. Two-dimensional materials and their prospects in transistor electronics;Schwierz;Nanoscale,2015

3. Performance evaluation of silicon and germanium ultrathin body (1 nm) junctionless field-effect transistor with ultrashort gate length (1 nm and 3 nm);Jhan;IEEE Electron Dev. Lett.,2015

4. Simulation of junctionless Si nanowire transistors with 3 nm gate length;Ansari;Appl Phys Lett,2010

5. Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering;Bousari;AEU – Int. J. Electron. Commun.,2019

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