Asymmetric Dual-Gate Junctionless GNR Tunnel FET as a High-Performance Photosensor With an Electrostatically Improved Photosensitivity: A Quantum Simulation Study-Reference-Cited by-同舟云学术

Asymmetric Dual-Gate Junctionless GNR Tunnel FET as a High-Performance Photosensor With an Electrostatically Improved Photosensitivity: A Quantum Simulation Study

Published:2023-11-15 Issue:22 Volume:23 Page:27431-27437
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Tamersit Khalil¹^ORCID

Affiliation:

1. Department of Electronics and Telecommunications and the Department of Electrical and Automatic Engineering, Guelma University, Guelma, Algeria

Funder

Royal Society through a grant awarded within the framework of the Royal Society Rising Star Africa Prize—2022

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/10316685/10262217.pdf?arnumber=10262217

Reference66 articles.

1. A Transition Metal Dichalcogenide Tunnel FET-Based Waveguide-Integrated Photodetector Using Ge for Near-Infrared Detection

2. Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study

3. Modeling and Simulation of Optically Gated TFET for Near Infra-Red Sensing Applications and Its Low Frequency Noise Analysis

4. Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance

5. An optoelectronic band-to-band tunnel transistor for near-infrared sensing applications: Device physics, modeling, and simulation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-Induced Graphene as Versatile Sensing Electrodes for Extended-Gate Field-Effect Transistors;IEEE Sensors Journal;2024-08-15

2. Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection;Nanomaterials;2024-01-19

3. Sensitivity analysis of TMD TFET based photo-sensor for visible light detection: A simulation study;Microelectronics Journal;2024-01