Sensitivity analysis of TMD TFET based photo-sensor for visible light detection: A simulation study

Author:

Tiwari Shreyas,Saha Rajesh

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. On the 60 mV/dec 300 K limit for MOSFET subthreshold swing;Cheung,2010

2. Steep-subthreshold slope dual gate negative capacitance junction less FET with dead channel: TCAD approach for digital/RF applications;Chaudhary;Microelectron. J.,2022

3. E. Catapano, M. Cassé and G. Ghibaudo, "Cryogenic MOSFET subthreshold current: from resistive networks to percolation transport in 1-D systems," IEEE Trans. Electron. Dev., doi: 10.1109/TED.2023.3283941..

4. Impact of temperature on the reliability of UTB-DG-FE-TFETs and their RF/analog and linearity parameter dependence;Gopal;J. Electron. Mater.,2023

5. A label-free dielectric-modulated biosensor using SiGe-heterojunction dual cavity dual metal electrically doped TFET;Dewan;Eng. Res. Express,2023

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