Optical assessment of vertical TFET based on heterojunction of GaSb-Si-Reference-Cited by-同舟云学术

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Optical assessment of vertical TFET based on heterojunction of GaSb-Si

Published:2024-11 Issue: Volume:195 Page:207955
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Tiwari Shreyas,Varma Tarun,Saha Rajesh^ORCID

Publisher

Elsevier BV

Reference33 articles.

1. Does source-to-drain tunneling limit the ultimate scaling of MOSFETs;Wang;Digest. International Electron Devices Meeting,2002

2. Breast cancer and prostate cancer detection considering transconductance generation factor (gm/IDS) as a sensing metric for III–V gate-all-around tunnel FET biosensor;Kumar;IEEE Sensor. J.,2023

3. Double-gate tunnel FET with high-κ\kappa gate dielectric;Boucart;IEEE Trans. Electron. Dev.,2007

4. Photosensor based on split gate TMD TFET using photogating effect for visible light detection;Joshi;IEEE Sensor. J.,2020

5. Dielectrically modulated single and double gate tunnel FET based biosensors for enhanced sensitivity;Talukdar;IEEE Sensor. J.,2021

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