BF2 ion implantation in silicon through surface oxides, behaviour of the fluorine with rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
2. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
3. A Structural and Electrical Comparison of BCl and BF 2 Ion‐Implanted Silicon
4. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
5. Rapid thermal and pulsed laser annealing of boron fluoride‐implanted silicon
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RTA processing of ionic boron implanted in silicon through screen oxide films: effects of some technological parameters;Annales de Chimie Science des Mat�riaux;1998-01
2. Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization;Synthetic Metals;1997-11
3. Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion;Microelectronics Journal;1994-10
4. Preamorphization Techniques for Shallow Junctions in SI;ESPRIT ’90;1990
5. Some Recently Emerged Problems of Ion Implantation. A. Review;Physica Status Solidi (a);1989-03-16
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