Preamorphization Techniques for Shallow Junctions in SI
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-009-0705-8_7.pdf
Reference8 articles.
1. Crowder, B.L., Ziegler, J.F., and Cole, G.W. (1973) ‘The Influence of the amorphous phase on boron atom distributions in ion implanted silicon’, in Ion Implantation in Semiconductors and Other Materials, Plenum, New York, pp. 257 – 266
2. Seidel, T. E., Knoell, R., Poli, G., Schwartz, B., Stevie, F.A., Chu, P. (1985) ‘Rapid thermal annealing of dopants implanted into preamorphized silicon’, J. Appl. Phys. 58, 683 –687
3. Tsai, M.Y. and Streetman, B.G. (1979) ‘Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF2 or Si + + B +’, J. Appl. P hys. 50, 183 – 187
4. Ozturk, M. C., Wortman, J.J., Osburn, C. M., Ajmera, A. Rozgonyi, A., Frey, E., Chu, W.-K., and Lee, C. (1988) ‘Optimization of the Germanium Preamorphization Conditions for Shallow-Junction Formation’, IEEE Trans. on Electr. Dev. 35, 659 – 668
5. Ozturk, M.C., Wortman, J.J., Chu, W.-K., Rozgonyi, G.A., and Griffis, D. (1987) ‘BF2 ionimplantation through surface oxides and the behaviour of the fluorine with rapid thermal annealing’, Mat. Left. 5, 311 – 314
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