Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325688
Reference18 articles.
1. Disorder produced by high‐dose implantation in Si
2. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
3. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
4. High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
5. Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon
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