Disorder produced by high‐dose implantation in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88886
Reference7 articles.
1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
2. Direct observations of defects in implanted and postannealed silicon wafers
3. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
4. Visible interference effects in silicon caused by high‐current–high‐dose implantation
5. Energy Dependence ofHe+andH+Channeling in Si Overlaid with Au Films
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