Visible interference effects in silicon caused by high‐current–high‐dose implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88887
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3. Optical properties of non-crystalline Si, SiO, SiOx and SiO2
4. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
5. Optical Constants of Silicon in the Region 1 to 10 ev
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1. Microstructural Properties of Helium Implanted Void Layers in Silicon as Related to Front‐Side Gettering;Journal of The Electrochemical Society;1996-02-01
2. The Amorphization and Subsequent Recovery of In Situ Annealed As+ Implanted Silicon;Journal of The Electrochemical Society;1989-04-01
3. Visible vs. Near Infrared Ellipsometry for the Investigation of Amorphous Silicon Films Produced by Ion Implantation;Journal of The Electrochemical Society;1987-07-01
4. Materials modification with ion beams;Reports on Progress in Physics;1986-05-01
5. Ion beam induced epitaxial crystallisation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03
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