Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions-Reference-Cited by-同舟云学术

Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions

Author:

Mikšová Romana¹,Horák Pavel¹,Holý Václav²,Macková Anna¹³

Affiliation:

1. Department of Neutron PhysicsNuclear Physics Institute of the CAS Rez Czech Republic

2. Department of Condensed Matter Physics, Faculty of Mathematics and PhysicsCharles University Prague Czech Republic

3. Department of Physics, Faculty of ScienceJ. E. Purkinje University Usti nad Labem Czech Republic

Funder

Czech Science Foundation

OP RDE, MEYS, Czech Republic under the project CANAM OP, CZ

CANAM

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

Reference34 articles.

3. KeysP.Phosphorus‐Defect Interactions During Thermal Annealing of Ion Implanted Silicon. Dissertation University of Florida 2001.

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