Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
1. Implantation damage and the anomalous transient diffusion of ion-implanted boron;Michel;Appl. Phys. Lett.,1987
2. Enhanced tail diffusion of ion implanted boron in silicon;Fan;Appl. Phys. Lett.,1987
3. Diffusion and codiffusion of boron and arsenic in mono-crystalline silicon during rapid thermal annealings;Gontrand;Semicond. Sci. Technol.,1992
4. Transient boron diffusion in ion-implanted crystalline and amorphous silicon;Sedgwick;J. Appl. Phys.,1988
5. Co-diffusion of As and B in and from polysilicon during rapid thermal annealing;Gontrand;Semicond. Sci. Technol.,1993
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. nLGAD Detectors for Low Penetrating Particles: Concept and First Results;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06
2. RTA processing of ionic boron implanted in silicon through screen oxide films: effects of some technological parameters;Annales de Chimie Science des Mat�riaux;1998-01
3. High-resolution damage depth profiles of unannealed sub-100 nm B[sup +] implants in (100) silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
4. Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization;Synthetic Metals;1997-11
5. Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon;MRS Proceedings;1997
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3