Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells-Reference-Cited by-同舟云学术

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Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

Published:2003-04 Issue: Volume:17 Page:250-251
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Mazzucato S.,Erol A.,Teke A.,Arikan M.C.,Potter R.J.,Balkan N.,Marie X.,Boland-Thoms A.,Carrère H.,Bedel E.,Lacoste G.,Fontaine C.,Arnoult A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1−xAs1−yNy/GaAs laser structures

2. Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs

3. Deep levels and their impact on generation current in Sn-doped InGaAsN

4. Evidence of an oxygen recombination center in p+–n GaInNAs solar cells

5. The effect of random doping fluctuations on the Fermi level in a semiconductor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response;Journal of Applied Physics;2014-12-21

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