Deep levels and their impact on generation current in Sn-doped InGaAsN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1396832
Reference10 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
3. 1-eV solar cells with GaInNAs active layer
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. Deep levels in p-type InGaAsN lattice matched to GaAs
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