The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1−xAs1−yNy/GaAs laser structures

Author:

Potter R.,Mazzucato S.,Balkan N.,Adams M.J.,Chalker P.R.,Joyce T.B.,Bullough T.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference40 articles.

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2. InGaAsN solar cells with 1.0 eV bandgap, lattice matched to GaAs;Kurtz;APL,1999

3. GaInAsN resonant cavity enhanced photodetector operating at 1.3 μ m;Heroux;APL,1999

4. Annealing behaviour of p-type GaInAsN grown by GSMBE;Xin;APL,1999

5. GaInNAs: A novel material for long-wavelength semiconductor lasers;Kondow;IEEE J. Sel. Top. Quantum Electron.,1997

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