Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
1. Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy
2. MOVPE growth of strained InGaAsN/GaAs quantum wells
3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
4. 1.5μm GaInNAs(Sb) lasers grown on GaAs by MBE
5. Long-wavelength GaInNAs(Sb) lasers on GaAs
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2. Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, Ga0.95In0.05N0.02As0.98, and GaN0.02As0.90Sb0.08layers;Physical Review B;2013-09-03
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