Evidence of an oxygen recombination center in p+–n GaInNAs solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126383
Reference14 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1-eV solar cells with GaInNAs active layer
3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
4. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
5. Deep levels in p-type InGaAsN lattice matched to GaAs
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1. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures;Nanoscale Research Letters;2012-09-28
2. Electronic structure and optical properties of dilute InAs1−xNx: pseudopotential calculations;Physica Scripta;2009-06-17
3. Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications;Optical and Quantum Electronics;2007-12-14
4. Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application;Journal of Applied Physics;2007-08-15
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