Electronic structure and optical properties of dilute InAs1−xNx: pseudopotential calculations
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/80/i=1/a=015701/pdf
Reference77 articles.
1. Band parameters for nitrogen-containing semiconductors
2. InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
3. InSb1−xNx growth and devices
4. Negative Band Gaps in DiluteInNxSb1−xAlloys
5. Growth of dilute GaNSb by plasma-assisted MBE
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