Growth of dilute GaNSb by plasma-assisted MBE-Reference-Cited by-同舟云学术

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Growth of dilute GaNSb by plasma-assisted MBE

Published:2005-05 Issue:1-4 Volume:278 Page:188-192
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Buckle L.,Bennett B.R.,Jollands S.,Veal T.D.,Wilson N.R.,Murdin B.N.,McConville C.F.,Ashley T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. III-N-V low-bandgap nitrides and their device applications

2. InSb1−xNx growth and devices

3. Negative Band Gaps in DiluteInNxSb1−xAlloys

4. InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices

5. k · P Model of Ordered GaNxAs1—x

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1. GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing;Frontiers in Electronic Materials;2022-06-16

2. Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb;Physical Review B;2019-07-25

3. Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys;Journal of Physics D: Applied Physics;2018-11-21

4. First principles study of the structural, electronic and optical properties of epitaxial GaSb1−x−yNyBix, lattice matched to GaSb;Materials Research Express;2018-09-05

5. Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices;Molecular Beam Epitaxy;2018

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