III-N-V low-bandgap nitrides and their device applications
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference45 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
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3. 1.3 [micro sign]m InAsP/InAlGaAs MQW lasers for high-temperature operation
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2. Structural, electronic, optical and thermodynamic properties of the cubic quadratic quaternary alloys GaxIn1-xAsyN1-y. Insight from DFT computations;Materials Today Communications;2021-03
3. GaNP-based photovoltaic device integrated on Si substrate;Solar Energy Materials and Solar Cells;2020-03
4. A model for thermal annealing on forming In—N clusters in InGaNP;Science China Physics, Mechanics and Astronomy;2012-03-28
5. Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers;SPIE Proceedings;2011-02-10
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