1.3 [micro sign]m InAsP/InAlGaAs MQW lasers for high-temperature operation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970671?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power and high-efficiency 1.3 µm InAsP compressively-strained MQW lasers at high temperatures
2. High temperature characteristic T0 and low threshold current density of 1.3 µm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
3. 1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operation
4. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
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