High temperature characteristic T0 and low threshold current density of 1.3 µm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950567?crawler=true&mimetype=application/pdf
Reference3 articles.
1. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
2. Strained quaternary quantum well lasers for high temperature operation
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3;Journal of Crystal Growth;2007-01
2. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05
3. The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes;Solid-State Electronics;2002-09
4. Improvement of the Temperature Characteristic of 1.3 µm GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers;Japanese Journal of Applied Physics;2002-05-15
5. Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE;Journal of Crystal Growth;2001-07
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