InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1606514
Reference17 articles.
1. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
2. Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors
3. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
4. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
5. GaInNAs: a novel material for long-wavelength semiconductor lasers
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