Surface reactions of radicals during deposition of amorphous semiconductors by photochemical decomposition of molecular hydrides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
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2. Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-01
3. Role of the deposition parameters in the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique;Philosophical Magazine B;1997-09
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5. Photo-processing of silicon nitride;Thin Solid Films;1995-10
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