An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference22 articles.
1. Scaling the Si MOSFET: from bulk to SOI to bulk;Yan;IEEE Trans. Electron. Devices,1992
2. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's;Takato;IEEE Trans. Electron. Devices,1991
3. Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits;Nitayami;IEEE Trans. Electron. Devices,1991
4. A novel circuit technology with surrounding gate transistors (SGT's) for utra high density DRAM's;Watanabe;IEEE J. Solid-State Circuits,1995
5. Impact of a vertical Φ-shape transistor (VΦT) cell for 1Gbit DRAM and beyond;Maeda;IEEE Trans. Electron. Devices,1995
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