Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Auth CP, Plummer JD (1998) A simple model for threshold voltage of surrounding-gate MOSFETs. IEEE Trans Electron Devices 45(11):2381–2383
2. Suveetha Dhanaselvam P, Balamurugan NB (2013) Analytical approach of a nanoscale triple- material surrounding gate (TMSG) MOSFETs for reduced short-channel effects, Microelectron J 44(5): 400–404
3. Chiang TK (2006) A new two-dimensional analytical model for threshold voltage in undoped surrounding-gate MOSFETs. 2006 8th international conference on solid-state and integrated circuit technology proceedings, Shanghai, 2006, pp. 1234–1238
4. Colinge JP, Lee CW, Afzalian A, Dehdashti N, Yan R, Ferain I et al (2009) SOI gated resistor: CMOS without junctions. IEEE Int SOI Conf 2:1–2
5. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yann R, Ferain I, Razavi P, Neill BO, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol ED-5:225–229
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