Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits-Reference-Cited by-同舟云学术

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits

Published:2021-08 Issue: Volume:114 Page:105110
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Huang Weixing,Zhu Huilong,Zhang Yongkui,Wu Zhenhua,Jia Kunpeng,Yin Xiaogen,Li Yangyang,Li Chen,Ai Xuezheng,Huo Qiang,Li Junfeng

Publisher

Elsevier BV

Subject

General Engineering

Reference36 articles.

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3. Negative capacitance gate stack and Landau FET-based voltage amplifiers and circuits: Impact of ferroelectric thickness and domain variations;Microelectronics Journal;2023-12

4. Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications;Materials Today Communications;2023-06

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