Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704983
Reference21 articles.
1. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2Buffer Layers
2. A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications
3. Applications of Modern Ferroelectrics
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1. Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits;Microelectronics Journal;2021-08
2. Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric;Japanese Journal of Applied Physics;2016-03-08
3. Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors;Semiconductor Science and Technology;2015-07-28
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