Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition

Author:

Alim Mohammad A.,Tahsin A.,Rezazadeh Ali A.,Gaquiere C.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

2. Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate;Gassoumi;Microelectron. J.,2009

3. Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors;Alim;Semicond. Sci. Technol.,2016

4. Compact modelling of nonlinear distortion in analogue communication circuits;Wambacq;Des. Autom. Test Eur. Conf.,2002

5. Intermodulation analysis of dual-gate FET mixers;Kim;IEEE Trans. Microw. Theory Tech.,2002

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1. Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application;Microelectronics Journal;2023-07

2. Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-11-22

3. Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection;2022 IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT);2022-09-23

4. X-parameter modeling investigation for microwave power devices;Microelectronics Journal;2022-09

5. Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3rd-Order Intermodulation Distortion;2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI);2021-12-18

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