Author:
Gassoumi M.,Bluet J.M.,Gaquière C.,Guillot G.,Maaref H.
Reference24 articles.
1. High Al-content AlGaN/GaN HEMT on SiC substrates with very-high power performance;Wu;IEDM Tech. Dig.,1999
2. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates;Sheppard;IEEE Electron Device Lett.,1999
3. Electric breakdown in GaN p–n junctions;Dmitriev;Appl. Phys. Lett.,1996
4. Monte Carlo simulation of electron transport in gallium nitride;Gelmont;J. Appl. Phys.,1993
5. Progress toward ultra-wideband AlGaN/GaN MMICs;Zolper;Solid-State Electron.,1999
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献