Behavioral-level modeling of GaN HEMT small-signal intrinsic noise based on DE-SVR algorithm

Author:

Wang ShaoweiORCID,Zhang JincanORCID,Yang Shi,Li Na,Wang Jinchan,Liu Min

Publisher

Elsevier BV

Subject

General Engineering

Reference30 articles.

1. Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers;Lee,2004

2. A Ka-band MMIC LNA in GaN-on-Si 100-nm Technology for high dynamic range radar receivers;Florian,2021

3. A 22–30-GHz GaN low-noise amplifier with 0.4–1.1-dB noise figure;Tong,2019

4. Low-frequency noise characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV illumination;Nagarajan,2020

5. Low-frequency 1/f noise and persistent transients in AlGaN-GaN HFETs;Katz,2005

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