Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications-Reference-Cited by-同舟云学术

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Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications

Published:2023-01 Issue: Volume:608 Page:155233
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chow Samuel Chen Wai,Dananjaya Putu Andhita,Ang Jia Min,Loy Desmond Jia Jun,Thong Jia Rui,Hoo Siew Wei,Toh Eng Huat,Lew Wen Siang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference63 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications;Chen;Solid-State Electron.,2016

2. Resistive Random Access Memory (RRAM)

3. An overview of materials issues in resistive random access memory;Zhu;J. Materiomics,2015

4. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch;Choi;Nano Lett.,2013

5. The highly scalable and reliable hafnium oxide ReRAM and its future challenges;Lien,2010

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1. Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations;Nanoscale Horizons;2024

2. Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices;Applied Surface Science;2023-12

3. Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode;Applied Physics Letters;2023-09-25

4. Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior;Journal of Materiomics;2023-08

5. Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties;Advanced Functional Materials;2023-07-30

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