Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations-Reference-Cited by-同舟云学术

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Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Published:2024 Issue:5 Volume:9 Page:828-842
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Koh Eng Kang¹²^ORCID,Dananjaya Putu Andhita¹^ORCID,Poh Han Yin¹²^ORCID,Liu Lingli¹^ORCID,Lee Calvin Xiu Xian¹²^ORCID,Thong Jia Rui¹²,You Young Seon²,Lew Wen Siang¹^ORCID

Affiliation:

1. School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore

2. GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore

Abstract

This work introduces a scalable CMOS-integrated memristive device designed to demonstrate dual-mode functionality encompassing both localized (digital) and interfacial (analog) switching mechanisms.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00554B

Reference65 articles.

1. In-memory computing with resistive switching devices

2. Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications

3. Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

4. Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes

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