Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering-Reference-Cited by-同舟云学术

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Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering

Published:2022-12 Issue: Volume:604 Page:154666
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Ning,Wang Yongsheng,Chen Zihao,Zhou Bin,Gao Jie,Wu Yanxia,Ma Yong,Hei Hongjun,Yu Shengwang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference50 articles.

1. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

2. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application;Xue;Nanoscale Res. Lett.,2018

3. Development of beta-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor;Pozina;Sci. Rep.,2020

4. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs;Zeng;IEEE Electron. Device Lett.,2018

5. Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application;Li;Appl. Surf. Sci.,2019

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1. High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3;Applied Surface Science;2025-01

2. The fabrication of ultra-wide bandgap GeO2 thin films by DC magnetron sputtering: The impacts of growth temperature and post-annealing process;Vacuum;2024-07

3. Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films;Vacuum;2024-06

4. Effective P-type N-doped α-Ga2O3 from First-Principles Calculations;Journal of Superconductivity and Novel Magnetism;2024-05-20

5. Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C;Journal of Materials Research and Technology;2024-05

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