Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C-Reference-Cited by-同舟云学术

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Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Published:2024-05 Issue: Volume:30 Page:2099-2109
ISSN:2238-7854
Container-title:Journal of Materials Research and Technology
language:en
Short-container-title:Journal of Materials Research and Technology

Author:

Shi Qianqian,Wei Sufen,Shi Feng,Chen Tao,Zhao Mingjie,Lee Ming-kwei^ORCID

Publisher

Elsevier BV

Reference58 articles.

1. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond Sci Technol,2016

2. A review of Ga2O3 materials, processing, and devices;Pearton;Appl Phys Rev,2018

3. β-Ga2O3 for wide-bandgap electronics and optoelectronics;Galazka;Semicond Sci Technol,2018

4. Perspective—Opportunities and future directions for Ga2O3;Mastro;ECS J Solid State Sci Technol,2017

5. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes;Konishi;Appl Phys Lett,2017

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